Document Details

Document Type : Article In Journal 
Document Title :
Behavior of the Switching Effect in P-Type TlInS2 Ternary Chalcogenide Semiconductor
سلوك ظاهرة القطع والتوصيل في شبه الموصل الثلاثي الشالكوجينيدي ثاليوم-إنديوم-ثنائي الكبريت TlInS2
 
Subject : Physics 
Document Language : English 
Abstract : Investigation of the switching phenomenon in single crystal TlInS2 revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current-voltage characteristics (CVC) of symmetrical Ag/p-TlInS2/Ag structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative differential resistance (NDR). TlInS2 is a ternary semiconductor exhibiting S-type i-v characteristics. The results strongly indicate that the phenomenon in our sample is very sensitive to temperature, light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient condition. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 20 
Issue Number : 2 
Publishing Year : 1429 AH
2008 AD 
Number Of Pages : 13 
Article Type : Article 
Added Date : Sunday, October 11, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
نجات توفيق عباسA. T. NagatResearcher  
فاطمة باهبري F. S. BahabriResearcher  
مصطفى محمد مبارك M. M. MobarkResearcher  
حمدي توفيق شعبان H. T. ShabanResearcher  
أحمد عبدالله الغامديA. A. AlGhamdiResearcher  
سهام الحربيS. R. AlharbiResearcher  

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