Document Details

Document Type : Thesis 
Document Title :
Transparent Conducting Metals Oxides: Fabrication, Properties and Applications
الفلزات الأكسيدية المنفذة للضوء والموصلة كهربيا: التصميم والخصائص والتطبيقات
 
Subject : Metallic oxides--Properties. 
Document Language : English 
Abstract : Zinc oxide is one of the promising metal oxide semiconductors suitable for use in optoelectronic devices as an alternative material to indium tin oxide. Zinc oxide is known as an n-type semiconductor. Its electrical conductivity is mainly due to zinc excess at interstitial position. Its electrical features could be modified thoroughly via thermal treatment with hydrogen or by an appropriate doping process, either by cationic or anionic substitution. In this study, we demonstrated an extensive study for the influence of two different dopants. The influence of copper and aluminum dopants concentration on the structure, morphology, optical and electrical properties of the sol-gel dip coated zinc oxide thin film. The results revealed that the optimum amount of Cu atoms is 2 wt.% which attains highly transparent film about 94% in the visible region and low resistivity about 4.32 .cm. The results also indicated that the optimum amount of Al atoms is 1 wt.% which attains highly transparent film about 97% in the visible region and low resistivity about 0.2 .cm. According to the obtained results one may say that the prepared Cu-doped zinc oxide thin film, at Cu content 2 wt.% and Al-doped zinc oxide thin film, at Al content 1 wt.%, are promising candidate for potential application in optoelectronic devices as transparent conducting electrodes instead of ITO. 
Supervisor : Ahmed A. AlGhamdi 
Thesis Type : Master Thesis 
Publishing Year : 1434 AH
2013 AD 
Number Of Pages : 97 
Co-Supervisor : Waleed Shirbeeny 
Added Date : Monday, December 15, 2014 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
هبة احمد الخمبشيAl-khambashi, Hibah AhmedInvestigator  

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